256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function (HN58C257A)

Description The Hitachi HN58C256A and HN58C257A are electrically erasable and programmable ROMs organized as 32768-word × 8-bit. They have realized high speed low power consumption and high reliability by employing advanced MNOS memory technology and CMOS process and circuitry technology. They al

文件：126.42 Kbytes 页数：25 Pages

HITACHIHitachi Semiconductor

日立日立公司

256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function (HN58C257A)

Description The Hitachi HN58C256A and HN58C257A are electrically erasable and programmable ROMs organized as 32768-word × 8-bit. They have realized high speed low power consumption and high reliability by employing advanced MNOS memory technology and CMOS process and circuitry technology. They al

文件：126.42 Kbytes 页数：25 Pages

HITACHIHitachi Semiconductor

日立日立公司

256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function (HN58C257A)

Description The Hitachi HN58C256A and HN58C257A are electrically erasable and programmable ROMs organized as 32768-word × 8-bit. They have realized high speed low power consumption and high reliability by employing advanced MNOS memory technology and CMOS process and circuitry technology. They al

文件：126.42 Kbytes 页数：25 Pages

HITACHIHitachi Semiconductor

日立日立公司

256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function (HN58C257A)

Description The Hitachi HN58C256A and HN58C257A are electrically erasable and programmable ROMs organized as 32768-word × 8-bit. They have realized high speed low power consumption and high reliability by employing advanced MNOS memory technology and CMOS process and circuitry technology. They al

文件：126.42 Kbytes 页数：25 Pages

HITACHIHitachi Semiconductor

日立日立公司

256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function (HN58C257A)

Description The Hitachi HN58C256A and HN58C257A are electrically erasable and programmable ROMs organized as 32768-word × 8-bit. They have realized high speed low power consumption and high reliability by employing advanced MNOS memory technology and CMOS process and circuitry technology. They al

文件：126.42 Kbytes 页数：25 Pages

HITACHIHitachi Semiconductor

日立日立公司

256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function (HN58C257A)

Description The Hitachi HN58C256A and HN58C257A are electrically erasable and programmable ROMs organized as 32768-word × 8-bit. They have realized high speed low power consumption and high reliability by employing advanced MNOS memory technology and CMOS process and circuitry technology. They al

文件：126.42 Kbytes 页数：25 Pages

HITACHIHitachi Semiconductor

日立日立公司

256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function (HN58C257A)

Description The Hitachi HN58C256A and HN58C257A are electrically erasable and programmable ROMs organized as 32768-word × 8-bit. They have realized high speed low power consumption and high reliability by employing advanced MNOS memory technology and CMOS process and circuitry technology. They al

文件：126.42 Kbytes 页数：25 Pages

HITACHIHitachi Semiconductor

日立日立公司

256k EEPROM (32-kword 횞 8-bit)

文件：1.05528 Mbytes 页数：18 Pages

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256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function (HN58C257A)

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Memory>EEPROM>Parallel EEPROM

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