HN2C01FE

Audio Frequency General Purpose Amplifier Applications

AudioFrequencyGeneralPurposeAmplifierApplications ●Smallpackage(dualtype) ●Highvoltageandhighcurrent:VCEO=50V,IC=150mA(max) ●HighhFE:hFE=120to400 ●ExcellenthFElinearity:hFE(IC=0.1mA)/(IC=2mA)=0.95(typ.)

EC2C01

5TO6WATTDC-DCCONVERTERS

EC2C01C

VCXO&VHFBandVCOApplicationsVaractorDiode

SiliconDiffused-JunctionType Features •Highcapacitanceratio.CR(C1.0V/C4.0V)=5.0typ •Ultrasmall-sizedpackage(1008),slimpackage (0.6mm),leadlesspackage.

HN2C01FU

NPNEPITAXIALTYPE(AUDIOFREQUENCYGENERALPURPOSEAMPLIFIERAPPLICATIONS)

AudioFrequencyGeneralPurposeAmplifierApplications ●Smallpackage(dualtype) ●Highvoltageandhighcurrent:VCEO=50V,IC=150mA(max) ●HighhFE:hFE=120~400 ●ExcellenthFElinearity:hFE(IC=0.1mA)/(IC=2mA)=0.95(typ.)

HN2C01FU

AudioFrequencyGeneralPurposeAmplifierApplications

AudioFrequencyGeneralPurposeAmplifierApplications ●Smallpackage(dualtype) ●Highvoltageandhighcurrent:VCEO=50V,IC=150mA(max) ●HighhFE:hFE=120~400 ●ExcellenthFElinearity:hFE(IC=0.1mA)/(IC=2mA)=0.95(typ.)

MMDF2C01HD

ComplementarySO??,DualPowerMOSFET

MMDF2C01HD

COMPLEMENTARYDUALTMOSPOWERFET2.0AMPERES12VOLTS

MediumPowerSurfaceMountProducts ComplementaryTMOSFieldEffectTransistors MiniMOSdevicesareanadvancedseriesofpowerMOSFETswhichutilizeMotorola’sHighCellDensityHDTMOSprocess.TheseminiaturesurfacemountMOSFETsfeatureultralowRDS(on)andtruelogiclevelperformance.The