订购数量 | 价格 |
---|---|
1+ |
首页>HN1A01FU-Y>芯片详情
HN1A01FU-Y_TOSHIBA/东芝_两极晶体管 - BJT VCEO -50V IC -150mA HFE 120 - 400 200mW科恒伟业二部
- 详细信息
- 规格书下载
产品属性
- 类型
描述
- 型号:
HN1A01FU-Y
- 功能描述:
两极晶体管 - BJT VCEO -50V IC -150mA HFE 120 - 400 200mW
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
PNP 集电极—基极电压
- VCBO:
集电极—发射极最大电压
- VCEO:
- 40 V 发射极 - 基极电压
- VEBO:
- 6 V
- 增益带宽产品fT:
直流集电极/Base Gain hfe
- Min:
100 A
- 安装风格:
SMD/SMT
- 封装/箱体:
PowerFLAT 2 x 2
供应商
相近型号
- HN1A01FU-GRLF
- HN1A01FU-Y/D1Y
- HN1A01FU-GR\D1G
- HN1A01FU-YLF
- HN1A01FU-GR/D1G
- HN1A01FU-YLXHF
- HN1A01FU-GR,LF(T
- HN1A01FU-Y-TE85L
- HN1A01FU-GR,LF
- HN1A01FU-GR(TE85L)
- HN1A01FU-GR(T5LF)
- HN1A01F-V
- HN1A01FU-GR(T5LF
- HN1A01FV-GR
- HN1A01FU-GR(T5L,F)
- HN1A01F-Y
- HN1A01FU-GR(T5L,F
- HN1A01F-Y(TE85L,F)
- HN1A01FU-GR(T5L
- HN1A01F-Y(TE85LF)
- HN1A01FU-GR(T
- HN1A01FU-GR(LFT)
- HN1A01F-Y/D1Y
- HN1A01FU-GR(L,F,T
- HN1A01FU-GR(L
- HN1A01FU-GR
- HN1A01FUGR
- HN1A01FU-G/D1G
- HN1A02F
- HN1A02F-GR
- HN1A01FU-G
- HN1A01FU(T5RSNFT
- HN1A07F
- HN1A01FU
- HN1A26FS-GR(TPL3)
- HN1A01F-GR/D1G
- HN1AO1F-GR
- HN1B01F
- HN1B01FDW
- HN1A01F-GR(TE85LF
- HN1B01FDW1
- HN1A01F-GR(TE85L.F
- HN1B01FDW1T1
- HN1A01F-GR(TE85L,F
- HN1B01FDW1-T1-E3
- HN1A01F-GR(TE85L)
- HN1B01FDW1T1G
- HN1A01F-GR
- HN1A01FGR
- HN1B01FGR