丝印：HMS38N60T；Package：TO-247；N-Channel Super Junction Power MOSFET

文件：600.95 Kbytes 页数：6 Pages

HMSEMI

华之美半导体

SMPS MOSFET

Features and Benefits ● SuperFast body diode eliminates the need for external diodes in ZVS applications ● Lower Gate Charge Results in Simple Drive Requirements ● Enhanced dV/dt capabilities offer improved ruggedness ● Higher Gate voltage threshold offers improved noise immunity Applications

文件：175.49 Kbytes 页数：9 Pages

IRF

Lower Gate Charge Results in Simple Drive Requirements

FEATURES • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications • Lower Gate Charge Results in Simple Drive Requirements • Enhanced dV/dt Capabilities Offer Improved Ruggedness • Higher Gate Voltage Threshold Offers Improved Noise Immunity • Compliant to RoHS Direc

文件：190.7 Kbytes 页数：9 Pages

VishayVishay Siliconix

威世

HEXFET Power MOSFET

文件：200.08 Kbytes 页数：9 Pages

IRF