丝印：HMS18N10D；Package：DFN5X6-8L；N-Channel Enhancement Mode Power MOSFET

文件：1.35968 Mbytes 页数：6 Pages

HMSEMI

华之美半导体

N-Channel Enhancement Mode Power MOSFET

文件：1.00807 Mbytes 页数：6 Pages

HMSEMI

华之美半导体

N-Channel Enhancement Mode Field Effect Transistor

文件：613.16 Kbytes 页数：5 Pages

MCC

NCE N-Channel Super Trench II Power MOSFET

Description The NCEP18N10AQ uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for h

文件：326.76 Kbytes 页数：7 Pages

NCEPOWER

新洁能