HMC8142RF/IF射频/中频RFID的射频放大器规格书PDF中文资料

HMC8142属于RF/IF射频/中频RFID的射频放大器。由亚德诺半导体技术有限公司制造生产的HMC8142射频放大器在射频应用中，射频放大器产品可用于信号增益和缓冲。这些产品与通用运算放大器的不同之处在于，它们通常适用于更高的频率，更倾向于提供不可调节的固定增益，并且输入或输出阻抗值符合常用传输线特性阻抗。

GENERAL DESCRIPTION

The HMC8142 is an integrated E-band gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), medium power amplifier with a temperature compensated on-chip power detector that operates from 81 GHz to 86 GHz. The HMC8142 provides 21 dB of gain, 25 dBm of output power at 1 dB compression, 29 dBm of output third-order intercept, and 26 dBm of saturated output power at 20 power added efficiency (PAE) from a 4 V power supply. The HMC8142 exhibits excellent linearity and is optimized for E-band communications and high capacity wireless backhaul radio systems. The amplifier configuration and high gain make it an excellent candidate for last stage signal amplification before the antenna. All data is taken with the chip in a 50 Ω test fixture connected via a 3 mil wide × 0. 5 mil thick × 7 mil long ribbon on each port.

FEATURES

Gain: 21 dB typical

Output power for 1 dB compression (P1dB): 25 dBm typical

Saturated output power (PSAT): 26 dBm typical

Output third-order intercept (OIP3): 29 dBm typical

Input return loss: 12 dB typical

Output return loss: 8 dB typical

DC supply: 4 V at 450 mA

No external matching required

Die size: 3.039 mm × 1.999 mm × 0.05 mm

APPLICATIONS

E-band communication systems

High capacity wireless backhaul radio systems

Test and measurement