HMC562RF/IF射频/中频RFID的射频放大器规格书PDF中文资料

General Description

The HMC562 is a GaAs MMIC PHEMT Distributed Driver Amplifi er die which operates between 2 and 35 GHz. The amplifi er provides 12.5 dB of gain, +19 dBm output IP3 and +12 dBm of output power at 1 dB gain compression while requiring 80 mA from a +8V supply. The HMC562 is ideal for EW, ECM and radar driver amplifi er applications. The HMC562 amplifi er I/O’s are DC blocked and internally matched to 50 Ohms facilitating integration into MultiChip-Modules (MCMs). All data is taken with the chip connected via two 0.075mm (3 mil) ribbon bonds of minimal length 0.31mm (12 mils).

特性 Features

P1dB Output Power: +18 dBm

Gain: 12.5 dB

Output IP3: +27 dBm

Supply Voltage: +8V @ 80 mA

50 Ohm Matched Input/Output

Die Size: 3.12 x 1.42 x 0.1 mm

Typical Applications

The HMC562 wideband driver is ideal for:

• Military & Space

• Test Instrumentation

• Fiber Optics