首页 >HMC432ETRIC>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
GaAsDC-6GHzSPDTSwitch Description TheHWS432isaGaAsPHEMTMMICSPDTswitchoperatingatDC-6GHzinalowcostminiatureQFN12L(3x3mm)plasticlead(Pb)freepackage.TheHWS432featureslowinsertionlossandhighisolationwithverylowDCpowerconsumption.ThisswitchcanbeusedinIEEE802.11a/b/gWLANPC | HWHexawave, Inc 汉威光电汉威光电股份有限公司 | HW | ||
Diagonal6.67mm(Type1/2.7)FrameReadoutCCDImageSensorwithaSquarePixelforColorCameras Description TheICX432DQisadiagonal6.67mm(Type1/2.7)interlineCCDsolid-stateimagesensorwithasquarepixelarrayand3.24Meffectivepixels.Adoptionofa3-fieldreadoutsystemensuressmallsizeandhighperformance.Thischipfeaturesanelectronicshutterwithvariablecharge-stora | SonySony Semiconductor Solutions Group 索尼 | Sony | ||
Diagonal6.67mm(Type1/2.7)FrameReadoutCCDImageSensorwithaSquarePixelforColorCameras Description TheICX432DQFisadiagonal6.67mm(Type1/2.7)interlineCCDsolid-stateimagesensorwithasquarepixelarrayand3.24Meffectivepixels.Adoptionofa3-fieldreadoutsystemensuressmallsizeandhighperformance.Thischipfeaturesanelectronicshutterwithvariablecharge-stor | SonySony Semiconductor Solutions Group 索尼 | Sony | ||
N-CHANNELPOWERMOSFETS FEATURES •LowRDs(on)athighvoltage •Improvedinductiveruggedness •Excellenthighvoltagestability •Fastswitchingtimes •Ruggedpolysilicongatecellstructure •Lowinputcapactiance •Extendedsafeoperatingarea •Improvedhightemperaturereliablitiy •TO-3package(Highvol | SamsungSamsung semiconductor 三星三星半导体 | Samsung | ||
N-ChannelPowerMOSFETs,4.5A,450V/500V Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighvoltage,highspaedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers. •VGSRatedat±20V •SiliconGateforFastSwitchi | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
N-ChannelPowerMOSFETs,4.5A,450V/500V | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelPowerMOSFETs,4.5A,450V/500V Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighvoltage,highspaedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers. •VGSRatedat±20V •SiliconGateforFastSwitchi | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=2.8A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2.0Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC |
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