HMC327MS8GRF/IF射频/中频RFID的射频放大器规格书PDF中文资料

General Description

The HMC327MS8G(E) is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC power amplifi er which operates between 3 and 4 GHz. The amplifi er is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved RF and thermal performance. With a minimum of external components, the amplifier provides 21 dB of gain, +30 dBm of saturated power at 45 PAE from a single +5V supply. Power down capability is available to conserve current consumption when the amplifi er is not in use.

Features

High Gain: 21 dB

Saturated Power: +30 dBm @ 45 PAE

Output P1dB: +27 dBm

Single Supply: +5V

Power Down Capability

Low External Part Count

Compact MSOP Package: 14.8 mm2

Typical Applications

The HMC327MS8G(E) is ideal for:

• Wireless Local Loop

• WiMAX & Fixed Wireless

• Access Points

• Subscriber Equipment