HMC323

HBT DRIVER AMPLIFIER DC - 3.0 GHz

GeneralDescription TheHMC323isaGaAsInGaPHeterojunctionBipolarTransistor(HBT)MMICamplifierthatoperatesfromasingleVccsupply.ThesurfacemountSOT26amplifiercanbeusedasabroadbandgainstageorusedwithexternalmatchingforoptimizednarrowbandapplications.TheHMC323o

HMC323

GaAs InGaP HBT MMIC DRIVER AMPLIFIER, DC - 3.0 GHz

HMC323_01

GaAs InGaP HBT MMIC DRIVER AMPLIFIER, DC - 3.0 GHz

I323

LeadedOscillator,TCXO,TCVCXOMetalPackage,FullSizeDIP

ProductFeatures: AvailableinBothClippedSinewaveand HCMOSOutputLevels CompatiblewithLeadfreeProcessing Applications: BaseStation IP WiMax/Wlan GeneralPurpose

IMX323LQ-C

Diagonal6.23mm(Type1/2.9)CMOSImageSensorwithSquarePixelforColorCameras

IMX323LQN

Diagonal6.23mm(Type1/2.9)Approx.2.19M-EffectivePixelColorCMOSImageSensor

IP323A

3AMPPOSITIVEVOLTAGEREGULATORS

FEATURES •0.04/VLINEREGULATION •0.3/ALOADREGULATION •THERMALOVERLOADPROTECTION •SHORTCIRCUITPROTECTION •SAFEOPERATINGAREAPROTECTION •1TOLERANCE •START–UPWITHNEGATIVEVOLTAGE(±SUPPLIES)ONOUTPUT •AVAILABLEIN5V,12VAND15VOPTIONS

IR323

5mmInfraredLED,T-13/4

Descriptions •EVERLIGHT’SInfraredEmittingDiode(IR323)isa highintensitydiode,moldedinabluetransparentplasticpackage. •Thedeviceisspectrallymatchedwithphototransistor,photodiode andinfraredreceivermodule. Features •Highreliability •Highradiantinte

IRF323

N-CHANNELPOWERMOSFETS

IRF323

N-ChannelPowerMOSFETs,3.0A,350-400V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighvoltage,highspaedapplications,suchasoff-lineswitchingpowersupplies,ACandDCmotorcontrols,relayandsolenoiddriversanddriversandotherpulsecircuits. •LowRDs(on) •VGS