首页 >HM7N65F-VB>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
650VN-ChannelMOSFET | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | HMSEMI | ||
650VN-ChannelMOSFET | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | HMSEMI | ||
N-ChannelSuperJunctionPowerMOSFET? | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | HMSEMI | ||
N-ChannelSuperJunctionPowerMOSFET? | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | HMSEMI | ||
650VN-ChannelPlanarMOSFET Features RDSON≤1.4Ω@Vgs=10V,Id=3.5A gateCharge(typicaltypical23.05nC) Crss(typicaltypical2.2pF) Fastswitchingcapability %avalanchetested Improveddv/dtcapability Applications SwitchModePowerSupply( UninterruptiblePowerSupply(UPS) PowerFactorCorrection(PFC)(P | SYChangzhou Shunye Electronics Co.,Ltd. 顺烨电子江苏顺烨电子有限公司 | SY | ||
650VN-ChannelPlanarMOSFET Features RDSON≤1.4Ω@Vgs=10V,Id=3.5A gateCharge(typicaltypical23.05nC) Crss(typicaltypical2.2pF) Fastswitchingcapability %avalanchetested Improveddv/dtcapability Applications SwitchModePowerSupply( UninterruptiblePowerSupply(UPS) PowerFactorCorrection(PFC)(P | SYChangzhou Shunye Electronics Co.,Ltd. 顺烨电子江苏顺烨电子有限公司 | SY | ||
650VN-ChannelPlanarMOSFET Features RDSON≤1.4Ω@Vgs=10V,Id=3.5A gateCharge(typicaltypical23.05nC) Crss(typicaltypical2.2pF) Fastswitchingcapability %avalanchetested Improveddv/dtcapability Applications SwitchModePowerSupply( UninterruptiblePowerSupply(UPS) PowerFactorCorrection(PFC)(P | SYChangzhou Shunye Electronics Co.,Ltd. 顺烨电子江苏顺烨电子有限公司 | SY | ||
650VN-ChannelPlanarMOSFET Features RDSON≤1.4Ω@Vgs=10V,Id=3.5A gateCharge(typicaltypical23.05nC) Crss(typicaltypical2.2pF) Fastswitchingcapability %avalanchetested Improveddv/dtcapability Applications SwitchModePowerSupply( UninterruptiblePowerSupply(UPS) PowerFactorCorrection(PFC)(P | SYChangzhou Shunye Electronics Co.,Ltd. 顺烨电子江苏顺烨电子有限公司 | SY | ||
650VN-ChannelPlanarMOSFET Features RDSON≤1.4Ω@Vgs=10V,Id=3.5A gateCharge(typicaltypical23.05nC) Crss(typicaltypical2.2pF) Fastswitchingcapability %avalanchetested Improveddv/dtcapability Applications SwitchModePowerSupply( UninterruptiblePowerSupply(UPS) PowerFactorCorrection(PFC)(P | SYChangzhou Shunye Electronics Co.,Ltd. 顺烨电子江苏顺烨电子有限公司 | SY | ||
650VN-ChannelPlanarMOSFET Features RDSON≤1.4Ω@Vgs=10V,Id=3.5A gateCharge(typicaltypical23.05nC) Crss(typicaltypical2.2pF) Fastswitchingcapability %avalanchetested Improveddv/dtcapability Applications SwitchModePowerSupply( UninterruptiblePowerSupply(UPS) PowerFactorCorrection(PFC)(P | SYChangzhou Shunye Electronics Co.,Ltd. 顺烨电子江苏顺烨电子有限公司 | SY |
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