Programmable linear constant current controller

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HMSEMI

华之美半导体

Power MOSFET(Vdss=-30V, Rds(on)=0.27ohm)

VDSS = -30V RDS(on) = 0.27Ω Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Pow

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IRF

HEXFET Power MOSFET (VDSS=-30V , RDS(on)=O.27ohm)

VDSS = -30V RDS(on) = 0.27Ω Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Pow

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IRF

HEXFET Power MOSFET (VDSS=-30V , RDS(on)=O.27ohm)

VDSS = -30V RDS(on) = 0.27Ω Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Pow

文件：210.51 Kbytes 页数：8 Pages

IRF