High Current Low Profile Surface Mount Inductors

High Current Low Profile Surface Mount Inductors • Operating Temperature Range -40°C to +130°C • Ambient Temperature, Maximum 80°C • Insulation System Class F, 155°C

文件：853.84 Kbytes 页数：2 Pages

BITECH

4 M PSRAM (512-kword x 8-bit) 2 k Refresh

Description The Hitachi HM658512A is a CMOS pseudo static RAM organized 512-kword × 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.8 µm Hi-CMOS process technology. Features • Single 5 V (±10) • High speed - Access time CE access time: 70/80/

文件：105.19 Kbytes 页数：22 Pages

HitachiHitachi Semiconductor

日立日立公司

4 M PSRAM (512-kword x 8-bit) 2 k Refresh

Description The Hitachi HM658512A is a CMOS pseudo static RAM organized 512-kword × 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.8 µm Hi-CMOS process technology. Features • Single 5 V (±10) • High speed - Access time CE access time: 70/80/

文件：105.19 Kbytes 页数：22 Pages

HitachiHitachi Semiconductor

日立日立公司

4 M PSRAM (512-kword x 8-bit) 2 k Refresh

Description The Hitachi HM658512A is a CMOS pseudo static RAM organized 512-kword × 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.8 µm Hi-CMOS process technology. Features • Single 5 V (±10) • High speed - Access time CE access time: 70/80/

文件：105.19 Kbytes 页数：22 Pages

HitachiHitachi Semiconductor

日立日立公司

4 M PSRAM (512-kword x 8-bit) 2 k Refresh

Description The Hitachi HM658512A is a CMOS pseudo static RAM organized 512-kword × 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.8 µm Hi-CMOS process technology. Features • Single 5 V (±10) • High speed - Access time CE access time: 70/80/

文件：105.19 Kbytes 页数：22 Pages

HitachiHitachi Semiconductor

日立日立公司

4 M PSRAM (512-kword x 8-bit) 2 k Refresh

Description The Hitachi HM658512A is a CMOS pseudo static RAM organized 512-kword × 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.8 µm Hi-CMOS process technology. Features • Single 5 V (±10) • High speed - Access time CE access time: 70/80/

文件：105.19 Kbytes 页数：22 Pages

HitachiHitachi Semiconductor

日立日立公司

4 M PSRAM (512-kword x 8-bit) 2 k Refresh

Description The Hitachi HM658512A is a CMOS pseudo static RAM organized 512-kword × 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.8 µm Hi-CMOS process technology. Features • Single 5 V (±10) • High speed - Access time CE access time: 70/80/

文件：105.19 Kbytes 页数：22 Pages

HitachiHitachi Semiconductor

日立日立公司

4 M PSRAM (512-kword x 8-bit) 2 k Refresh

Description The Hitachi HM658512A is a CMOS pseudo static RAM organized 512-kword × 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.8 µm Hi-CMOS process technology. Features • Single 5 V (±10) • High speed - Access time CE access time: 70/80/

文件：105.19 Kbytes 页数：22 Pages

HitachiHitachi Semiconductor

日立日立公司

4 M PSRAM (512-kword x 8-bit) 2 k Refresh

Description The Hitachi HM658512A is a CMOS pseudo static RAM organized 512-kword × 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.8 µm Hi-CMOS process technology. Features • Single 5 V (±10) • High speed - Access time CE access time: 70/80/

文件：105.19 Kbytes 页数：22 Pages

HitachiHitachi Semiconductor

日立日立公司

4 M PSRAM (512-kword x 8-bit) 2 k Refresh

Description The Hitachi HM658512A is a CMOS pseudo static RAM organized 512-kword × 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.8 µm Hi-CMOS process technology. Features • Single 5 V (±10) • High speed - Access time CE access time: 70/80/

文件：105.19 Kbytes 页数：22 Pages

HitachiHitachi Semiconductor

日立日立公司