LOW IQ ASIC FOR E-BANK SYSTEM MANAGEMENT

文件：1.04481 Mbytes 页数：11 Pages

HMSEMI

华之美半导体

移动电源系统管理IC

HMsemi

华之美半导体

Power MOSFET(Vdss=-30V, Rds(on)=0.085ohm)

Description These P-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. ● Ultra

文件：98.42 Kbytes 页数：8 Pages

IRF

HEXFET Power MOSFET

文件：112.91 Kbytes 页数：8 Pages

IRF

Power MOSFET(Vdss=-30V, Rds(on)=0.085ohm)

Description These P-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. ● Ultra

文件：98.42 Kbytes 页数：8 Pages

IRF