PMU for Portable Applications

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HMSEMI

华之美半导体

充电降压二合一IC

HMsemi

华之美半导体

Power MOSFET(Vdss=200V, Rds(on)max=2.2ohm, Id=0.6A)

Benefits ● Low Gate to Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current Applications ● High frequency DC-DC converters

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IRF

High frequency DC-DC converters

Benefits ● Low Gate to Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current ● Lead-Free ● Halogen-Free Applications ● High frequency DC-DC converters

文件：229.42 Kbytes 页数：8 Pages

IRF

High frequency DC-DC converters

Benefits ● Low Gate to Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current ● Lead-Free ● Halogen-Free Applications ● High frequency DC-DC converters

文件：229.42 Kbytes 页数：8 Pages

IRF