HM5117805LJ-6数据手册Micron中文资料规格书

描述 Description

The HM5117805is a CMOS dynamic RAM organized 2,097,152-word ×8-bit. It employs the most
advanced CMOS technology for high performance and low power. The HM5117805 offers Extended Data Out(EDO) Page Mode as a high speed access mode. Multiplexed address input permits the HM5117805 to be packaged in standard 28-pin plastic SOJ and 28-pin TSOP.

特性 Features

•  Single 5 V (±10%)
•  Access time: 50 ns/60 ns/70 ns (max)
•  Power dissipation
    Active mode:  605 mW/550 mW/495 mW (max)
    Standby mode : 11 mW (max)
                        : 0.83 mW (max) (L-version)
•  EDO page mode capability
•  Long refresh period
    2048 refresh cycles : 32 ms
                              : 128 ms (L-version)
•  4 variations of refresh
 RAS-only refresh
 CAS-before-RAS refresh
 Hidden refresh
 Self refresh (L-version)
•  Battery backup operation (L-version)