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MSM5116400A

4,194,304-Wordx4-BitDYNAMICRAM:FASTPAGEMODETYPE

4,194,304-Wordx4-BitDYNAMICRAM:FASTPAGEMODETYPE

OKIOki Electric Cable Co.,Ltd

冲电线冲电线株式会社

MSM5116400B

4,194,304-Wordx4-BitDYNAMICRAM:FASTPAGEMODETYPE

DESCRIPTION TheMSM5116400Bisa4,194,304-wordx4-bitdynamicRAMfabricatedinOkissilicon-gateCMOStechnology.TheMSM5116400Bachieveshighintegration,high-speedoperation,andlow-powerconsumptionbecauseOkimanufacturesthedeviceinaquadruple-layerpolysilicon/double-layermetalC

OKIOki Electric Cable Co.,Ltd

冲电线冲电线株式会社

MSM5116400C

4,194,304-Wordx4-BitDYNAMICRAM:FASTPAGEMODETYPE

DESCRIPTION TheMSM5116400Cisa4,194,304-wordx4-bitdynamicRAMfabricatedinOkissilicon-gateCMOStechnology.TheMSM5116400Cachieveshighintegration,high-speedoperation,andlow-powerconsumptionbecauseOkimanufacturesthedeviceinaquadruple-layerpolysilicon/double-layermetalC

OKIOki Electric Cable Co.,Ltd

冲电线冲电线株式会社

MSM5116400D

4,194,304-Wordx4-BitDYNAMICRAM:FASTPAGEMODETYPE

DESCRIPTION TheMSM5116400Disa4,194,304-wordx4-bitdynamicRAMfabricatedinOki’ssilicon-gateCMOStechnology.TheMSM5116400Dachieveshighintegration,high-speedoperation,andlow-powerconsumptionbecauseOkimanufacturesthedeviceinaquadruple-layerpolysilicon/double-layermetal

OKIOki Electric Cable Co.,Ltd

冲电线冲电线株式会社

MSM5116400F

4,194,304-Word횞4-BitDYNAMICRAM:FASTPAGEMODETYPE

DESCRIPTION TheMSM5116400Fisa4,194,304-word×4-bitdynamicRAMfabricatedinOki’ssilicon-gateCMOStechnology.TheMSM5116400Fachieveshighintegration,high-speedoperation,andlow-powerconsumptionbecauseOkimanufacturesthedeviceinaquadruple-layerpolysilicon/double-layermeta

OKIOki Electric Cable Co.,Ltd

冲电线冲电线株式会社

MSM5116400F-XXSJ

4,194,304-Word횞4-BitDYNAMICRAM:FASTPAGEMODETYPE

DESCRIPTION TheMSM5116400Fisa4,194,304-word×4-bitdynamicRAMfabricatedinOki’ssilicon-gateCMOStechnology.TheMSM5116400Fachieveshighintegration,high-speedoperation,andlow-powerconsumptionbecauseOkimanufacturesthedeviceinaquadruple-layerpolysilicon/double-layermeta

OKIOki Electric Cable Co.,Ltd

冲电线冲电线株式会社

MSM5116400F-XXTS-K

4,194,304-Word횞4-BitDYNAMICRAM:FASTPAGEMODETYPE

DESCRIPTION TheMSM5116400Fisa4,194,304-word×4-bitdynamicRAMfabricatedinOki’ssilicon-gateCMOStechnology.TheMSM5116400Fachieveshighintegration,high-speedoperation,andlow-powerconsumptionbecauseOkimanufacturesthedeviceinaquadruple-layerpolysilicon/double-layermeta

OKIOki Electric Cable Co.,Ltd

冲电线冲电线株式会社

TC5116400BSJ

4,194,304WORDX4BITDYNAMICRAM

Description TheTC5116400BSJ/BSTisthenewgenerationdynamicRAMorganized4,194,304wordby4bit.TheTC5116400BSJ/BST utilizesToshiba'sCMOSsilicongateprocesstechnologyaswellasadvancedcircuittechniquestoprovidewideoperating margins,bothinternallyandtothesystemuser.Mu

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TC5116400J

4,194,304WORDX4BITDYNAMICRAM

DESCRIPTION TheTC5116400J/FTisthenewgenerationdynamicRAMorganized4,194,304wordby4bit.The TC5116400J/FTutilizesToshiba'sCMOSsilicongateprocesstechnologyaswellasadvancedcircuit techniquestoprovidewideoperatingmargins,bothinternallyandtothesystemuser.Multiple

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

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