IRFS4310

HEXFETPowerMOSFET

Benefits •WorldwideBestRDS(on)inTO-220 •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheSOA •EnhancedbodydiodedV/dtanddI/dtCapability Applications •HighEfficiencySynchronousRectificationinSMPS •UninterruptiblePowerS

IRFS4310

IscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=130A@TC=25℃ ·DrainSourceVoltage :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=7.0mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Switching

IRFS4310PBF

HEXFET짰PowerMOSFET

Benefits •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheSOA •EnhancedbodydiodedV/dtanddI/dtCapability •Lead-Free Applications •HighEfficiencySynchronousRectificationinSMPS •UninterruptiblePowerSupply •HighSpeedPow

IRFS4310PBF

HighEfficiencySynchronousRectificationinSMPS

IRFS4310PBF

HighEfficiencySynchronousRectificationinSMPS

IRFS4310PBF

HighEfficiencySynchronousRectificationinSMPS

IRFS4310RPBF

HighEfficiencySynchronousRectificationinSMPS

IRFS4310TRLPBF

HighEfficiencySynchronousRectificationinSMPS

IRFS4310Z

AdvancedProcessTechnology

Features ●AdvancedProcessTechnology ●UltraLowOn-Resistance ●Dynamicdv/dtRating ●175°COperatingTemperature ●FastSwitching ●RepetitiveAvalancheAlloweduptoTjmax ●Lead-Free,RoHSCompliant ●AutomotiveQualified*

IRFS4310Z

IscN-ChannelMOSFETTransistor

•FEATURES •WithTo-263(D2PAK)package •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation •APPLICATIONS •Switchingapplications