丝印：HM30N02Q；Package：DFN3x3-8L；Load switching

文件：713.69 Kbytes 页数：6 Pages

HMSEMI

华之美半导体

Power MOSFET 30 Amps, 24 Volts

文件：53.42 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

N-Channel E nhancement Mode Field Effect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● TO-252 and TO-251 Package.

文件：864.19 Kbytes 页数：8 Pages

SAMHOP

三合微科

N-Channel E nhancement Mode Field Effect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● TO-252 and TO-251 Package.

文件：864.19 Kbytes 页数：8 Pages

SAMHOP

三合微科