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HM2N20R

N-Channel Enhancement Mode Power MOSFET

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

华之美半导体深圳市华之美半导体有限公司

2N20

DrainCurrentID=2A@TC=25C

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

EMDA2N20F

N?륝hannelLogicLevelEnhancementModeFieldEffectTransistor

ProductSummary: BVDSS200V RDSON(MAX.)120mΩ ID18A UIS,100Tested Pb‐FreeLeadPlating&HalogenFree

EXCELLIANCEExcelliance MOS Corp.

杰力科技杰力科技股份有限公司

HM2N20

N-ChannelEnhancementModePowerMOSFET

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

华之美半导体深圳市华之美半导体有限公司

HM2N20MR

200VN-ChannelEnhancementModeMOSFET

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

华之美半导体深圳市华之美半导体有限公司

MPT2N20

N-ChannelPowerMOSFETs,3.5A,150-200V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulsecircuits. ●LOWRDS(on) ●VQSRatedat±20V ●SiliconG

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

MTD2N20

POWERFIELDEFFECTTRANSISTORN-CHANNELENHANCEMENT-MODESILICONGATE

MotorolaMotorola, Inc

摩托罗拉

MTD2N20

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=2A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.5Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

MTEE2N20FP

N-ChannelEnhancementModePowerMOSFET

CYSTEKECCystech Electonics Corp.

全宇昕科技全宇昕科技股份有限公司

MTP2N20

POWERFIELDEFFECTTRANSISTOR,N-CHANNELENHANCEMENT-MODESILICONGATE

MotorolaMotorola, Inc

摩托罗拉

MTP2N20

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=3.25A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.8Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

MTP2N20

N-ChannelPowerMosfets

ARTSCHIP

ARTSCHIP ELECTRONICS CO.,LMITED.

MTP2N20

N-ChannelPowerMOSFETs3.5A,150-200V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulsecircuits. ●LOWRDS(on) ●VQSRatedat±20V ●SiliconG

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

MTP2N20

N-ChannelPowerMOSFETs3.5A,150-200V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulsecircuits. ●LOWRDS(on) ●VQSRatedat±20V ●SiliconG

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

RFP2N20

2A,200V,3.500Ohm,N-ChannelPowerMOSFET

TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydriversanddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrivepower.These

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

RFP2N20L

2A,200V,3.500Ohm,LogicLevel,N-ChannelPowerMOSFET

TheRFP2N20LN-Channelenhancementmodesilicongatepowerfieldeffecttransistorisspecificallydesignedforusewithlogiclevel(5V)drivingsourcesinapplicationssuchasprogrammablecontrollers,automotiveswitching,andsolenoiddrivers.Thisperformanceisaccomplishedthroughaspecial

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

RFP2N20L

N-ChannelLogicLevelPowerField-EffectTransistors(L2FET)

TheRFL1N18LandRFL1N20LandtheRFP2N18LandRFP2N20Laren-channelenhancement-modesilicon-gatepower,field-effecttransistorsspecificallydesignedforusewithlogiclevel(5volt)drivingsourcesInapplicationssuchasprogrammablecontrollers,automotiveswitching,andsolenoiddrivers.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

RFP2N20L

N-ChannelLogicLevelPowerField-EffectTransistors(L2FET)

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

RT2N20M

COMPOSITETRANSISTORWITHRESISTORFORSWITCHINGAPPLICATIONSILICONNPNEPITAXIALTYPE

DESCRIPTION RT2N20Misacompositetransistorwithbuilt-inbiasresistor FEATURE ●Built-inbiasresistor(R1=4.7KΩ) ●Minipackageforeasymounting APPLICATION Invertedcircuit,switchingcircuit,interfacecircuit,drivercircuit

ISAHAYAIsahaya Electronics Corporation

Isahaya电子公司

供应商型号品牌批号封装库存备注价格
HMSEMI
2022+
SOT-223
40000
原厂代理 终端免费提供样品
询价
HMSEMI
23+
SOT-223
6800
专注配单,只做原装进口现货
询价
HMSEMI
23+
SOT-223
6800
专注配单,只做原装进口现货
询价
23+
N/A
36100
正品授权货源可靠
询价
VB
2019
TO-220
55000
绝对原装正品假一罚十!
询价
Hmsemi
23+
TO-TO-220
12300
全新原装真实库存含13点增值税票!
询价
Hmsemi
2020+
TO-220
43310
公司代理品牌,原装现货超低价清仓!
询价
HMSEMI
23+
TO-220
10000
公司只做原装正品
询价
HMSEMI
2022+
TO-220
79999
询价
Hmsemi
23+
TO-220
6000
原装正品,支持实单
询价
更多HM2N20R供应商 更新时间2024-4-29 10:02:00