Single channel 3.0-15.0V peak 15.0A H-bridge driver chip

文件：475.24 Kbytes 页数：9 Pages

HMSEMI

华之美半导体

直流有刷马达正反转驱动IC

HMsemi

华之美半导体

N-Channel MOSFET Transistor

文件：338.31 Kbytes 页数：2 Pages

ISC

无锡固电

High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series

FEATURES: • Fast switching times • Low RDS(on) HDMOS™ process • Rugged polysilicon gate cell structure • Excellent high voltage stability • Low input capacitance • Improved high temperature reliability APPLICATIONS: • Switching power supplies • Motor controls • Audio Amplifiers • Invert

文件：49.56 Kbytes 页数：1 Pages

IXYS

艾赛斯

N-Channel Power MOSFET

DESCRIPTION The Nell IRF250 is a three-terminal silicon device with current conduction capability of 30A, fast switching speed, low on-state resistance, breakdown voltage rating of 200V, and max. threshold voltage of 4 volts. They are designed for use in applications such as switched mode po

文件：435.69 Kbytes 页数：7 Pages

NELLSEMI

尼尔半导体