Trench MOSFET

Zealcore

华虹挚芯

P-Channel Enhancement Mode Power MOSFET

Description The HM2301B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. Features ● VDS = -20V,ID = -2.5A RDS(ON)

文件：809.17 Kbytes 页数：7 Pages

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Dual P-Channel Enhancement Mode Field Effect Transistor

文件：411.44 Kbytes 页数：6 Pages

HMSEMI

华之美半导体

P-Channel Enhancement Mode Power MOSFET

文件：984.29 Kbytes 页数：7 Pages

HMSEMI

华之美半导体