MTD20N03HDL

TMOSPOWERFETLOGICLEVEL20AMPERES30VOLTSRDS(on)=0.035OHM

HDTMOSE-FET™PowerFieldEffectTransistor DPAKforSurfaceMount N-ChannelEnhancement-ModeSiliconGate Thisadvancedhigh–celldensityHDTMOSE–FETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignalsooffersadrain–to–so

MTD20N03HDL

N-ChannelDPAKPowerMOSFET

MTD20N03HDLG

N-ChannelDPAKPowerMOSFET

MTD20N03HDLT

PowerMOSFET20Amps,30Volts,LogicLevel

MTD20N03HL

N-Channel30-V(D-S)MOSFET

NTD20N03

30VN-ChannelMOSFET

Features •Ultra−LowRDS(on),SingleBase,AdvancedTechnology •SPICEParametersAvailable •DiodeisCharacterizedforuseinBridgeCircuits •IDSSandV(on)SpecifiedatElevatedTemperatures •HighAvalancheEnergySpecified TypicalApplications •PowerSupplies •InductiveLoads •

NTD20N03G

N-Channel30-V(D-S)MOSFET

NTD20N03HL

N-Channel30-V(D-S)MOSFET

RFD20N03

20A,30V,0.025Ohm,N-ChannelPowerMOSFETs

TheRFD20N03andRFD20N03SMN-ChannelpowerMOSFETsaremanufacturedusingtheMegaFETprocess.ThisprocesswhichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplications

RFD20N03SM

N-Channel30-V(D-S)MOSFET