丝印：HM110N03D；Package：DFN5x6-8L；N-Channel Enhancement Mode Power MOSFET

文件：553.41 Kbytes 页数：7 Pages

HMSEMI

华之美半导体

N-Channel MOSFET

文件：1.93729 Mbytes 页数：4 Pages

KEXIN

科信电子

Product Scout Automotive

文件：5.67799 Mbytes 页数：6 Pages

RENESAS

瑞萨

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 110A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1.7mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

无锡固电