IRF130

14A,100V,0.160Ohm,N-ChannelPowerMOSFET

14A,100V,0.160Ohm,N-ChannelPowerMOSFET ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsar

IRF130

TRANSISTORSN-CHANNEL(Vdss=100V,Rds(on)=0.18ohm,Id=14A)

ProductSummary TheHEXFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors. Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superior

IRF130

N-CHANNELPOWERMOSFETS

FEATURES ●LowRDS(on) ●Improvedinductiveruggedness ●Fastswitchingtimes ●Ruggedpolysilicongatecellstructure ●Lowinputcapacitance ●Extendedsafeoperatingarea ●Improvedhightemperaturereliability ●TO-3package(Standard)

IRF130

HighPower,HighSpeedApplications

DESCRIPTION •DrainCurrentID=14A@TC=25℃ •DrainSourceVoltage- :VDSS=100V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.18Ω(Max) •HighPower,HighSpeedApplications APPLICATIONS •Switchingpowersupplies •UPS •Motorcontrols •Highenergypulsecircuits.

IRF130

REPETITIVEAVALANCHEANDdv/dtRATEDHEXFETTRANSISTORS

Features: •RepetitiveAvalancheRatings •Dynamicdv/dtRating •HermeticallySealed •SimpleDriveRequirements •EaseofParalleling

IRF130

SEMICONDUCTORS

IRF130SMD

N-CHANNELPOWERMOSFETFORHI.RELAPPLICATIONS

IRFE130

N-CHANNELPOWERMOSFET

IRFE130

REPETITIVEAVALANCHEANDdv/dtRATEDHEXFETTRANSISTORSSURFACEMOUNT(LCC-18)

REPETITIVEAVALANCHEANDdv/dtRATED HEXFET®TRANSISTORSSURFACEMOUNT(LCC-18) Theleadlesschipcarrier(LCC)packagerepresentsthelogicalnextstepinthecontinualevolutionofsurfacemounttechnology.DesingedtobeaclosereplacementfortheTO-39package,theLCCwillgivedesigners

IRFE130

SimpleDriveRequirements