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FQA10N80C

800VN-ChannelMOSFET

Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhig

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQAF10N80

800VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FTK10N80DD

10.0Amps,800VoltsN-ChannelMOS-FET

FS

First Silicon Co., Ltd

FTK10N80F

10.0Amps,800VoltsN-ChannelMOS-FET

FS

First Silicon Co., Ltd

FTK10N80P

10.0Amps,800VoltsN-ChannelMOS-FET

FS

First Silicon Co., Ltd

FTK10N80PD

10.0Amps,800VoltsN-ChannelMOS-FET

FS

First Silicon Co., Ltd

HFH10N80

800VN-ChannelMOSFET

SEMIHOW

SemiHow Co.,Ltd.

HFP10N80

SuperiorAvalancheRuggedTechnology

SEMIHOW

SemiHow Co.,Ltd.

HFS10N80

SuperiorAvalancheRuggedTechnology

SEMIHOW

SemiHow Co.,Ltd.

HM10N80A

siliconN-channelEnhanced

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

华之美半导体深圳市华之美半导体有限公司

HM10N80F

siliconN-channelEnhancedVDMOSFETs

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

华之美半导体深圳市华之美半导体有限公司

HMS10N80F

N-ChannelSuperJunctionMOSFET

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

华之美半导体深圳市华之美半导体有限公司

HMS10N80K

N-ChannelSuperJunctionMOSFET

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

华之美半导体深圳市华之美半导体有限公司

IXFA10N80P

PowerMOSFET

IXYS

IXYS Integrated Circuits Division

IXFA10N80P

PolarHVHiPerFETPowerMOSFET

PolarHV™HiPerFETPowerMOSFET N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features ●InternationalStandardPackages ●AvalancheRated ●LowPackageInductance ●EasytoDriveandtoProtect Advantages ●EasytoMount ●SpaceSavings ●HighPowerDensity Applicati

IXYS

IXYS Integrated Circuits Division

IXFA10N80P

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=10A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.1Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXFH10N80P

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=10A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.1Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXFH10N80P

PowerMOSFET

IXYS

IXYS Integrated Circuits Division

IXFH10N80P

PolarHVHiPerFETPowerMOSFET

PolarHV™HiPerFETPowerMOSFET N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features ●InternationalStandardPackages ●AvalancheRated ●LowPackageInductance ●EasytoDriveandtoProtect Advantages ●EasytoMount ●SpaceSavings ●HighPowerDensity Applicati

IXYS

IXYS Integrated Circuits Division

IXFP10N80

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=10A@TC=25℃ ·DrainSourceVoltage-VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.1Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

供应商型号品牌批号封装库存备注价格
HLD
24+25+/26+27+
TO-220-3
78800
一一有问必回一特殊渠道一有长期订货一备货HK仓库
询价
HJ
16+
原厂封装
2000
原装现货假一罚十
询价
白板
23+
TO-220
50000
全新原装正品现货,支持订货
询价
白板
23+
NA/
3260
原装现货,当天可交货,原型号开票
询价
23+
N/A
46290
正品授权货源可靠
询价
一级代理
22+
N/A
46100
一级代理放心采购
询价
HLD
21+ROHS
TO220
28888
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
HUILIDA/汇利达
2022
TO-220
80000
原装现货,OEM渠道,欢迎咨询
询价
无印
TO-220
68900
原包原标签100%进口原装常备现货!
询价
HI-OPTEL
2022+
54230
原厂代理 终端免费提供样品
询价
更多HLDF10N80供应商 更新时间2024-5-25 16:16:00