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IPM-L123

MiniatureIntegratedPowerMonitor

JDSUJDS Uniphase Corporation

捷迪讯

IRF123

8.0Aand9.2A,80Vand100V,0.27and0.36Ohm,N-Channel,PowerMOSFETs

Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplica

Intersil

Intersil Corporation

IRF123

N-ChannelPowerMOSFETs,11A,60-100V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulsecircuits. •LowRDs

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

IRF123

N-CHANNELPOWERMOSFETS

FEATURES •LowRDs

SamsungSamsung semiconductor

三星三星半导体

IRF123

NanosecondSwitchingSpeeds

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRF123

IRF120-123/IRF520-523MTP10N08/10N10N-ChannelPowerMOSFETs

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulsecircuits. •LowRDs

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

IRF123

N-ChannelPowerMOSFETs,11A,60-100V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulsecircuits. •LowRDs

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

IRF123

N-ChannelPowerMOSFETs,11A,60-100V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulsecircuits. •LowRDs

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

IRF123

N-ChannelPowerMosfets,

ARTSCHIP

ARTSCHIP ELECTRONICS CO.,LMITED.

IRFD123

1.3Aand1.1A,80Vand100V,0.30and0.40Ohm,N-ChannelPowerMOSFETs

Description TheseareadvancedpowerMOSFETisdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregul

HARRIS

Harris Corporation

详细参数

  • 型号:

    HLB123T

  • 制造商:

    HSMC

  • 制造商全称:

    HSMC

  • 功能描述:

    NPN EPITAXIAL PLANAR TRANSISTOR

供应商型号品牌批号封装库存备注价格
HIS
23+
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
HIS
25+
NA
880000
明嘉莱只做原装正品现货
询价
UTC
2023+环保现货
TO220
50000
专注军工、汽车、医疗、工业等方案配套一站式服务
询价
ST/意法
23+
TO-223
69820
终端可以免费供样,支持BOM配单!
询价
HSMC
22+
TO-220
20000
保证原装正品,假一陪十
询价
HSMC
2022
TO220
3080
原装正品
询价
HUAJING
TO-220
22+
6000
十年配单,只做原装
询价
HUAJING
23+
TO-220
6000
原装正品,支持实单
询价
HSMC
22+
TO-220
100000
代理渠道/只做原装/可含税
询价
HSMC
23+
TO-220
5000
专注配单,只做原装进口现货
询价
更多HLB123T供应商 更新时间2025-7-15 17:02:00