HL8325G技术资料参数批发采购日立OPNEXT-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
HL8325G	文件：21.54 Kbytes Page：4 Pages	GaAlAs Laser Diode Description The HL8325G is a high-power 0.8 µm band GaAlAs laser diode with a TQW (triple quantum well) structure. Its internal circuit configuration is suited for operation on a single positive supply voltage. It is suitable as a light source for optical disk memories, card readers and various o 文件：21.54 Kbytes 页数：4 Pages	HitachiHitachi Semiconductor 日立日立公司	Hitachi
HL8325G	文件：93.6 Kbytes Page：4 Pages	GaAlAs Laser Diode Description The HL8325G is a high-power 0.8 µm band GaAlAs laser diode with a TQW (triple quantum well) structure. Its internal circuit configuration is suitable for operation on a single positive supply voltage. It is suitable as a light source for optical disk memories, card readers and various 文件：93.6 Kbytes 页数：4 Pages	OPNEXT	OPNEXT
HL8325G	文件：300 bytes Page：1 Pages	GaAlAs Laser Diode	HITACHI 日立	HITACHI
HMC8325	文件：309.91 Kbytes Page：16 Pages	E-Band Low Noise Amplifier 文件：309.91 Kbytes 页数：16 Pages	AD 亚德诺	AD
HMC8325-SX	文件：309.91 Kbytes Page：16 Pages	E-Band Low Noise Amplifier 文件：309.91 Kbytes 页数：16 Pages	AD 亚德诺	AD
IRFH8325PBF	文件：245.58 Kbytes Page：9 Pages	HEXFETPower MOSFET 文件：245.58 Kbytes 页数：9 Pages	IRF	IRF

更多HL8325G供应商更新时间2025-10-8 9:01:00