INFRARED EMITTING DIODE

Infrared Light Emitting Diode (GaAlAs) INFRARED EMITTING DIODE The HL602,850nm GaAlAs IRED mounted in a COB package with epoxy-lens. The HL602 has narrow beam angle, and is able to solder in the backside of PC board. FEATURES ● Compact,COB package with epoxy-lens ● Narrow beam angle (= ± 5° )

文件：239.93 Kbytes 页数：1 Pages

KODENSHI

可天士

Low Operating Current Visible Laser Diode

Description The HL6331G/32G are 0.63 µm band AlGaInP 10mW laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser levelers, laser scanners and optical equipment for measurement. Features • Visible light output: λp = 635 nm Typ • Single longitudina

文件：95.92 Kbytes 页数：4 Pages

OPNEXT

Low Operating Current Visible Laser Diode

Description The HL6331G/32G are 0.63 µm band AlGaInP 10mW laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser levelers, laser scanners and optical equipment for measurement. Features • Visible light output : 635 nm Typ • Optical output power

文件：36.66 Kbytes 页数：8 Pages

HitachiHitachi Semiconductor

日立日立公司

Low Operating Current Visible Laser Diode

Description The HL6331G/32G are 0.63 µm band AlGaInP 10mW laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser levelers, laser scanners and optical equipment for measurement. Features • Visible light output: λp = 635 nm Typ • Single longitudina

文件：95.92 Kbytes 页数：4 Pages

OPNEXT

Low Operating Current Visible Laser Diode

Description The HL6331G/32G are 0.63 µm band AlGaInP 10mW laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser levelers, laser scanners and optical equipment for measurement. Features • Visible light output : 635 nm Typ • Optical output power

文件：36.66 Kbytes 页数：8 Pages

HitachiHitachi Semiconductor

日立日立公司

Low Operating Current Visible Laser Diode

Description The HL6333MG/34MG are 0.63 µm band AlGaInP 10mW laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser levelers, laser scanners and optical equipment for measurement. Features • Visible light output : 635 nm Typ • Optical output power :

文件：36.44 Kbytes 页数：8 Pages

HitachiHitachi Semiconductor

日立日立公司

Low Operating Current Visible Laser Diode

Description The HL6333MG/34MG are 0.63 µm band AlGaInP 10mW laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser levelers, laser scanners and optical equipment for measurement. Features • Visible light output: λp = 635 nm Typ • Single longitudin

文件：95.13 Kbytes 页数：4 Pages

OPNEXT

Low Operating Current Visible Laser Diode

Description The HL6333MG/34MG are 0.63 µm band AlGaInP 10mW laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser levelers, laser scanners and optical equipment for measurement. Features • Visible light output : 635 nm Typ • Optical output power :

文件：36.44 Kbytes 页数：8 Pages

HitachiHitachi Semiconductor

日立日立公司

Low Operating Current Visible Laser Diode

Description The HL6333MG/34MG are 0.63 µm band AlGaInP 10mW laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser levelers, laser scanners and optical equipment for measurement. Features • Visible light output: λp = 635 nm Typ • Single longitudin

文件：95.13 Kbytes 页数：4 Pages

OPNEXT

633nm Lasing Laser Diode

Description The HL6339G/42G is 0.63 µm band AlGaInP laser diode with a multi-quantum well (MQW) structure. Lasing wavelength of this laser is nearly equal to the wavelength of He-Ne gas laser. They are suitable as light sources for laser levelers, laser scanners and optical equipment for measurem

文件：44.5 Kbytes 页数：8 Pages

HitachiHitachi Semiconductor

日立日立公司