Low Operating Current Visible Laser Diode

Description The HL6331G/32G are 0.63 µm band AlGaInP 10mW laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser levelers, laser scanners and optical equipment for measurement. Features • Visible light output : 635 nm Typ • Optical output power

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HitachiHitachi Semiconductor

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Low Operating Current Visible Laser Diode

Description The HL6331G/32G are 0.63 µm band AlGaInP 10mW laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser levelers, laser scanners and optical equipment for measurement. Features • Visible light output: λp = 635 nm Typ • Single longitudina

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Low Operating Current Visible Laser Diode

Description\nThe HL6331G/32G are 0.63 µm band AlGaInP 10mW laser diodes with a multi-quantum well (MQW)\nstructure. They are suitable as light sources for laser levelers, laser scanners and optical equipment for measurement. •  Visible light output : 635 nm Typ\n•  Optical output power : 10 mW CW\n•  Low operating current : 55 mA Typ\n•  Low operating voltage : 2.4 V Max\n•  Operating temperature : +60°C\n•  TM mode oscillationApplication\n•  Laser leveler\n•  Laser scanner\n•  Measurement;

HITACHI

日立

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