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NCE6602N

NCENandP-ChannelEnhancementModePowerMOSFET

Description TheNCE6602Nusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Thisdeviceissuitablefor useasaBatteryprotectionorinotherSwitchingapplication. GeneralFeatures ●N-Channel ●VDS=30V,ID=3.5A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NI6602

32-BitCounter/Timers

NI

National Instruments Inc.

NIPCI-6602

32-BitCounter/Timers

NI

National Instruments Inc.

NIPXI-6602

32-BitCounter/Timers

NI

National Instruments Inc.

PJS6602

20VComplementaryEnhancementModeMOSFET

PANJITPan Jit International Inc.

強茂強茂股份有限公司

PJS6602

20VComplementaryEnhancementModeMOSFET

Features AdvancedTrenchProcessTechnology SpeciallyDesignedforSwitchLoad,PWMApplication,etc. LeadfreeincompliancewithEURoHS2.0 GreenmoldingcompoundasperIEC61249standard

PANJITPan Jit International Inc.

強茂強茂股份有限公司

PJS6602-AU

20VComplementaryEnhancementModeMOSFET

Features AdvancedTrenchProcessTechnology SpeciallyDesignedforSwitchLoad,PWMApplication,etc. AEC-Q101qualified LeadfreeincompliancewithEURoHS2.0 GreenmoldingcompoundasperIEC61249standard

PANJITPan Jit International Inc.

強茂強茂股份有限公司

PT6602

SingleDevice9AOutput

TI1Texas Instruments

德州仪器美国德州仪器公司

PT6602

9AMPADJUSTABLEINTEGRATEDSWITCHINGREGULATOR

TITexas Instruments

德州仪器美国德州仪器公司

PT6602F

SingleDevice9AOutput

TI1Texas Instruments

德州仪器美国德州仪器公司

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