INA333

INA823Precision,Low-Power,Wide-Supply(2.7-Vto36-V)InstrumentationAmplifier

INA333

INA851Precision,Low-Noise,FullyDifferentialOutputInstrumentationAmplifierWithOptionalAttenuatingGain

INA333

INA592High-Precision,Wide-Bandwidthe-trim??DifferenceAmplifier

INA333

INA592High-Precision,Wide-Bandwidthe-trim??DifferenceAmplifier

INA333

INA597High-Precision,Wide-Bandwidthe-trim??DifferenceAmplifier

INA333

INA851Precision,Low-Noise,FullyDifferentialOutputInstrumentationAmplifierWithAttenuatingGainandOutputClamping

1Features •Gainprogrammablefrom G=0.2to10,000byusingexternalresistor •Fullydifferentialoutputswithintegratedclamping •Lowoffsetvoltage:10μV(typ),35μV(max) •Lowoffsetdrift:0.1μV/°C(typ),0.3μV/°C(max) •Lowinputbiascurrent:5nA(typ) •Inputstagenoise

INA333

INA630Precision,126dBCMRR,IndirectCurrentFeedbackInstrumentationAmplifier

1Features •Optimizedforcostandsizesensitiveapplications •Super-betabipolarprecision: –Highcommon-moderejection:126dB (minimum)forG=20V/Vto1000V/V –Lowoffsetvoltage:50μV(typical),350μV (maximum) –Lowoffsetvoltagedrift:0.5μV/ºC(typical), 2μV/°C(maximum) –L

INA333

Micro-Power,Zerø-Drift,Rail-to-RailOutInstrumentationAmplifier

FEATURES •LowOffsetVoltage:25μV(maxat25°C), G≥100 •LowDrift:0.2μV/°C,G≥1000 •LowNoise:55nV/√Hz,G≥100 •HighCMRR:100dB(minat25°C),G≥10 •SupplyRange:+1.8Vto+5.5V •InputVoltage:(V–)+0.1Vto(V+)–0.1V •OutputRange:(V–)+0.05Vto(V+)–0.05V •

INA333AIDGKR

Micro-Power(50uA),Zer첩-Drift,Rail-to-RailOutInstrumentationAmplifier

INA333AIDGKR

Micro-Power(50mA),Zero-Drift,Rail-to-RailOutInstrumentationAmplifier