1.5A, 50V Quad Low Side Power Driver with Serial Bus Control and Fault Protection

Description The HIP0060 is a 5V logic controlled Quad Low Side Power Driver. The outputs are individually protected for over-current (OC), over-temperature (OT) and over-voltage (OV). If an OC short circuit in the output load is sensed (IS) in one output power driver, that output current will be

文件：50.14 Kbytes 页数：7 Pages

INTERSIL

1.5A, 50V Quad Low Side Power Driver with Serial Bus Control and Fault Protection

Features • Quad NDMOS Output Drivers in a High Voltage Power BiMOS Process • Over-Stress Protection - Each Output - Over-Current Limiting. . . . . . . . . . . . . . . . . . 1.5A Min - Internal Zener Drain-to-Gate Over-Voltage Clamp Protection . . . . . . . . . . . . . . . . . . . . . . . . .

文件：437.54 Kbytes 页数：7 Pages

RENESAS

瑞萨

1.5A, 50V Quad Low Side Power Driver with Serial Bus Control and Fault Protection

Features • Quad NDMOS Output Drivers in a High Voltage Power BiMOS Process • Over-Stress Protection - Each Output - Over-Current Limiting. . . . . . . . . . . . . . . . . . 1.5A Min - Internal Zener Drain-to-Gate Over-Voltage Clamp Protection . . . . . . . . . . . . . . . . . . . . . . . . .

文件：437.54 Kbytes 页数：7 Pages

RENESAS

瑞萨

1.5A, 50V Quad Low Side Power Driver with Serial Bus Control and Fault Protection

Description The HIP0060 is a 5V logic controlled Quad Low Side Power Driver. The outputs are individually protected for over-current (OC), over-temperature (OT) and over-voltage (OV). If an OC short circuit in the output load is sensed (IS) in one output power driver, that output current will be

文件：50.14 Kbytes 页数：7 Pages

INTERSIL

60V, 3.5A, 3-Transistor Common Source ESD Protected Power MOSFET Array

Features • Three 3.5A Power MOS N-Channel Transistors • Output Voltage to 60V • rDS(ON). . . . . . 0.225 Max Per Transistor at VGS = 10V • Pulsed Current . . . . . . . . . . . . . . . 10A Each Transistor • Avalanche Energy. . . . . . . . . . . 100mJ Each Transistor • Grounded Tab Eliminates

文件：538.4 Kbytes 页数：10 Pages

RENESAS

瑞萨

60V, 3.5A, 3-Transistor Common Source ESD Protected Power MOSFET Array

Description The HIP0061 is a power MOSFET array that consists of three matched N-Channel enhancement mode MOS transistors connected in a common source configuration. The advanced Harris PASIC2 process technology used in this product utilizes efficient geometries that provides outstand ing device

文件：60.12 Kbytes 页数：9 Pages

INTERSIL

60V, 3.5A, 3-Transistor Common Source ESD Protected Power MOSFET Array

Features • Three 3.5A Power MOS N-Channel Transistors • Output Voltage to 60V • rDS(ON). . . . . . 0.225 Max Per Transistor at VGS = 10V • Pulsed Current . . . . . . . . . . . . . . . 10A Each Transistor • Avalanche Energy. . . . . . . . . . . 100mJ Each Transistor • Grounded Tab Eliminates

文件：538.4 Kbytes 页数：10 Pages

RENESAS

瑞萨

60V, 3.5A, 3-Transistor Common Source ESD Protected Power MOSFET Array

Description The HIP0061 is a power MOSFET array that consists of three matched N-Channel enhancement mode MOS transistors connected in a common source configuration. The advanced Harris PASIC2 process technology used in this product utilizes efficient geometries that provides outstand ing device

文件：60.12 Kbytes 页数：9 Pages

INTERSIL

60V, 3.5A, 3-Transistor Common Source ESD Protected Power MOSFET Array

Features • Three 3.5A Power MOS N-Channel Transistors • Output Voltage to 60V • rDS(ON). . . . . . 0.225 Max Per Transistor at VGS = 10V • Pulsed Current . . . . . . . . . . . . . . . 10A Each Transistor • Avalanche Energy. . . . . . . . . . . 100mJ Each Transistor • Grounded Tab Eliminates

文件：538.4 Kbytes 页数：10 Pages

RENESAS

瑞萨

60V, 3.5A, 3-Transistor Common Source ESD Protected Power MOSFET Array

Description The HIP0061 is a power MOSFET array that consists of three matched N-Channel enhancement mode MOS transistors connected in a common source configuration. The advanced Harris PASIC2 process technology used in this product utilizes efficient geometries that provides outstand ing device

文件：60.12 Kbytes 页数：9 Pages

INTERSIL