APM2030NV

N-ChannelEnhancementModeMOSFET

•20V/6A,RDS(ON)=28mΩ(typ.)@VGS=4.5V RDS(ON)=38mΩ(typ.)@VGS=2.5V •SuperHighDenseCellDesign •ReliableandRugged •LeadFreeAvailable(RoHSCompliant)

APM2030NVC-TR

N-ChannelEnhancementModeMOSFET

•20V/6A,RDS(ON)=28mΩ(typ.)@VGS=4.5V RDS(ON)=38mΩ(typ.)@VGS=2.5V •SuperHighDenseCellDesign •ReliableandRugged •LeadFreeAvailable(RoHSCompliant)

APM2030NVC-TRL

N-ChannelEnhancementModeMOSFET

•20V/6A,RDS(ON)=28mΩ(typ.)@VGS=4.5V RDS(ON)=38mΩ(typ.)@VGS=2.5V •SuperHighDenseCellDesign •ReliableandRugged •LeadFreeAvailable(RoHSCompliant)

APM2030NVC-TU

N-ChannelEnhancementModeMOSFET

•20V/6A,RDS(ON)=28mΩ(typ.)@VGS=4.5V RDS(ON)=38mΩ(typ.)@VGS=2.5V •SuperHighDenseCellDesign •ReliableandRugged •LeadFreeAvailable(RoHSCompliant)

APM2030NVC-TUL

N-ChannelEnhancementModeMOSFET

•20V/6A,RDS(ON)=28mΩ(typ.)@VGS=4.5V RDS(ON)=38mΩ(typ.)@VGS=2.5V •SuperHighDenseCellDesign •ReliableandRugged •LeadFreeAvailable(RoHSCompliant)

AV2030

LINEARINTEGRATEDCIRCUIT

DESCRIPTION TheAVICAV2030isamonolithicaudiopoweramplifierintegratedcircuit. FEATURES *Verylowexternalcomponentrequired. *Highcurrentoutputandhighoperatingvoltage. *Lowharmonicandcrossoverdistortion. *Built-inOvertemperatureprotection. *Shortc

BF2030

SiliconN-ChannelMOSFETTetrode

•Forlownoise,highgaincontrolledinputstagesupto1GHz •Operatingvoltage5V •Pb-free(RoHScompliant)package1) •QualifiedaccordingAECQ101

BF2030

SiliconN-ChannelMOSFETTetrode(Forlownoise,highgaincontrolledinputstagesupto1GHzOperatingvoltage5V)

•Forlownoise,highgaincontrolledinputstagesupto1GHz •Operatingvoltage5V

BF2030

SiliconN-ChannelMOSFETTetrode

BF2030R

SiliconN-ChannelMOSFETTetrode

BF2030R

SiliconN-ChannelMOSFETTetrode

•Forlownoise,highgaincontrolledinputstagesupto1GHz •Operatingvoltage5V •Pb-free(RoHScompliant)package1) •QualifiedaccordingAECQ101

BF2030W

SiliconN-ChannelMOSFETTetrode(Forlownoise,highgaincontrolledinputstagesupto1GHzOperatingvoltage5V)

•Forlownoise,highgaincontrolledinputstagesupto1GHz •Operatingvoltage5V

BF2030W

SiliconN-ChannelMOSFETTetrode

BF2030W

SiliconN-ChannelMOSFETTetrode

•Forlownoise,highgaincontrolledinputstagesupto1GHz •Operatingvoltage5V •Pb-free(RoHScompliant)package1) •QualifiedaccordingAECQ101

CDBD2030-G

ChipSchottkyBarrierRectifier

CDBD2030-HF

ChipSchottkyBarrierRectifier

CDSUA2030-C

CDSUASeries

CDSUA2030-C

CDSUASeries

CDSUA2030-C-S

CDSUASeries

CEM2030A

DualEnhancementModeFieldEffectTransistor(NandPChannel)

FEATURES ■20V,6A,RDS(ON)=30mΩ@VGS=4.5V. RDS(ON)=40mΩ@VGS=2.5V. ■-20V,-4.3A,RDS(ON)=90mΩ@VGS=-4.5V. RDS(ON)=120mΩ@VGS=-2.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability