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首页>HGTP7N60B3>详情
HGTP7N60B3 分立半导体产品晶体管 - UGBT、MOSFET - 单 FAIRCHILD/仙童半导体
- 详细信息
- 规格书下载
产品属性
- 类型
描述
- 制造商编号
:HGTP7N60B3
- 生产厂家
:安森美
- 电压 - 集射极击穿(最大值)
:600V
- 电流 - 集电极(Ic)(最大值)
:14A
- 脉冲电流 - 集电极 (Icm)
:56A
- 不同 Vge,Ic 时的 Vce(on)
:2.1V @ 15V,7A
- 功率 - 最大值
:60W
- 开关能量
:160µJ(开),120µJ(关)
- 输入类型
:标准
- 栅极电荷
:23nC
- 25°C 时 Td(开/关)值
:26ns/130ns
- 测试条件
:480V,7A,50欧姆,15V
- 反向恢复时间(trr)
:37ns
- 工作温度
:-55°C ~ 150°C(TJ)
- 安装类型
:通孔
- 封装/外壳
:TO-220-3
- 供应商器件封装
:TO-220-3
供应商
相近型号
- HGTP7N60A4-NL
- HGTU7N60C3
- HGTP7N60A4NL
- HGV1050M/TR
- HGTP7N60A4G7N60A4
- HGV115
- HGTP7N60A4-F102
- HGV135
- HGV155
- HGTP7N60A4D7N60A4D
- HGV175
- HGTP7N60A4D
- HGV195
- HGTP7N60A47N60A4
- HGV-2406U
- HGTP7N60A4_NL
- HGV-2409U
- HGTP7N60A4_F102
- HGV331M5/TR
- HGTP7N60A4
- HGV333AIM5/TR
- HGTP7N60
- HGV333M5/TR
- HGTP6N50E1D
- HGV35
- HGTP6N40EID
- HGV55
- HGTP6N40E1D
- HGV6001M5/TR
- HGTP5N120CND
- HGV6001TIM5/TR
- HGTP5N120CN
- HGV6021M5/TR
- HGTP5N120BNP
- HGV6041M/TR
- HGV6041M5/TR
- HGV6042M/TR
- HGTP5N120BND
- HGV620M/TR
- HGTP5N120BN
- HGV722ID/TR
- HGTP5N120
- HGV75
- HGTP3N60C3D-07
- HGV751M5/TR
- HGTP3N60C3D
- HGV772IMTR
- HGTP3N60C3
- HGV774IMTR
- HGTP3N60B3R4724



