12A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

The HGTP2N120BND and HGT1S2N120BNDS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state cond

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13A, 1200V, NPT Series N-Channel IGBT

The HGTD2N120CNS, HGTP2N120CN, and HGT1S2N120CNS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low

文件：89.48 Kbytes 页数：7 Pages

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13A, 1200V, NPT Series N-Channel IGBT

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13A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes

The HGTP2N120CND and HGT1S2N120CNDS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state cond

文件：92.95 Kbytes 页数：7 Pages

INTERSIL