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11N120CN

43A,1200V,NPTSeriesN-ChannelIGBT

TheHGTG11N120CN,HGTP11N120CN,andHGT1S11N120CNSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelo

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

11N120CND

43A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode

TheHGTG11N120CNDisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofab

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

HGTG11N120CN

43A,1200V,NPTSeriesN-ChannelIGBT

TheHGTG11N120CN,HGTP11N120CN,andHGT1S11N120CNSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelo

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

HGTG11N120CN

43A,1200V,NPTSeriesN-ChannelIGBT

TheHGTG11N120CN,HGTP11N120CN,andHGT1S11N120CNSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelo

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

HGTG11N120CND

43A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode

TheHGTG11N120CNDisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofab

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

HGTG11N120CND

43A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode

TheHGTG11N120CNDisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofab

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

HGTG11N120CND

NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode

ONSEMION Semiconductor

安森美半导体安森美半导体公司

HGTP11N120CN

43A,1200V,NPTSeriesN-ChannelIGBT

TheHGTG11N120CN,HGTP11N120CN,andHGT1S11N120CNSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelo

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

HGTP11N120CN

43A,1200V,NPTSeriesN-ChannelIGBT

TheHGTG11N120CN,HGTP11N120CN,andHGT1S11N120CNSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelo

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

供应商型号品牌批号封装库存备注价格
ON/安森美
20+
10000
询价拨打15919799957全天在线
询价
ON/安森美
22+
TO-247
50000
原装正品.假一罚十
询价
ON/安森美
2122+
TO-247
12000
只做原装现货可开票
询价
ON/安森美
2023+
TO-247
50000
AI智能識别、工業、汽車、醫療方案LPC批量及配套一站
询价
ON/安森美
23+
TO-247
2500
代理货源,价格优势
询价
ON/安森美
22+
TO-247
10000
公司原装现货,欢迎咨询
询价
ON/安森美
23+
TO-247
5000
原装正品实单必成
询价
ON/安森美
23+
TO-247
8215
原厂原装
询价
ON/安森美
2022+
5000
只做原装,价格优惠,长期供货。
询价
ON/安森美
22+
TO247
51000
询价
更多HGTG11N120CNDIC供应商 更新时间2024-5-15 14:00:00