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HGTD7N60B3S中文资料PDF规格书
HGTD7N60B3S规格书详情
The HGTD7N60B3S, HGT1S7N60B3S and HGTP7N60B3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C.
Features
• 14A, 600V, TC = 25°C
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 120ns at TJ = 150°C
• Short Circuit Rating
• Low Conduction Loss
产品属性
- 型号:
HGTD7N60B3S
- 制造商:
Rochester Electronics LLC
- 功能描述:
- Bulk
- 制造商:
Harris Corporation
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
HARRIS |
2020+ |
TO-252 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
INTERSIL |
22+ |
SOT252 |
100000 |
代理渠道/只做原装/可含税 |
询价 | ||
HARRIS |
97+ |
TO-252 |
259 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
Fairchild |
23+ |
TO-252 |
9500 |
专业优势供应 |
询价 | ||
HARRIS |
22+ |
TO-252 |
9800 |
只做原装正品假一赔十!正规渠道订货! |
询价 | ||
HARRIS |
2023+ |
TO-252 |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
询价 | ||
FAIRCHILD/仙童 |
2022+ |
TO-252 |
57550 |
询价 | |||
INTERSIL |
23+ |
TO-252TO-251 |
90000 |
只做原厂渠道价格优势可提供技术支持 |
询价 | ||
HARRIS |
23+ |
TO-252 |
30000 |
代理全新原装现货,价格优势 |
询价 | ||
HARRIS |
05+ |
原厂原装 |
7870 |
只做全新原装真实现货供应 |
询价 |