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首页>HGTD3N60C3S9A>芯片详情
HGTD3N60C3S9A 分立半导体产品晶体管 - UGBT、MOSFET - 单 FAIRCHILD/仙童半导体
- 详细信息
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产品参考属性
- 类型
描述
- 产品编号:
HGTD3N60C3S9A
- 制造商:
onsemi
- 类别:
- 包装:
管件
- 不同 Vge、Ic 时 Vce(on)(最大值):
2V @ 15V,3A
- 开关能量:
85µJ(开),245µJ(关)
- 输入类型:
标准
- 测试条件:
480V,3A,82 欧姆,15V
- 工作温度:
-40°C ~ 150°C(TJ)
- 安装类型:
表面贴装型
- 封装/外壳:
TO-252-3,DPak(2 引线 + 接片),SC-63
- 供应商器件封装:
TO-252AA
- 描述:
IGBT 600V 6A 33W TO252AA
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