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首页>HGTD1N120BNS9A>详情
HGTD1N120BNS9A 分立半导体产品晶体管 - UGBT、MOSFET - 单 FSC/仙童
- 详细信息
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产品参考属性
- 类型
描述
- 产品编号:
HGTD1N120BNS9A
- 制造商:
onsemi
- 类别:
- 包装:
管件
- IGBT 类型:
NPT
- 不同 Vge、Ic 时 Vce(on)(最大值):
2.9V @ 15V,1A
- 开关能量:
70µJ(开),90µJ(关)
- 输入类型:
标准
- 25°C 时 Td(开/关)值:
15ns/67ns
- 测试条件:
960V,1A,82 欧姆,15V
- 工作温度:
-55°C ~ 150°C(TJ)
- 安装类型:
表面贴装型
- 封装/外壳:
TO-252-3,DPak(2 引线 + 接片),SC-63
- 供应商器件封装:
TO-252AA
- 描述:
IGBT 1200V 5.3A 60W TO252AA
供应商
- 企业:
深圳中芯器材有限公司
- 商铺:
- 联系人:
李小姐/文小姐
- 手机:
13600196139
- 询价:
- 电话:
0755-8254197 /0755-23903959
- 传真:
0755-83352412
- 地址:
深圳市福田区华强北上步工业区101栋西座520
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