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HGT1S7N60A4DS中文资料PDF规格书
HGT1S7N60A4DS规格书详情
The HGTG7N60A4D, HGTP7N60A4D and HGT1S7N60A4DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49331. The diode used in anti-parallel is the development type TA49370.
This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies.
Features
• >100kHz Operation At 390V, 7A
• 200kHz Operation At 390V, 5A
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . . 75ns at TJ = 125°C
• Low Conduction Loss
• Temperature Compensating SABER™ Model www.intersil.com
产品属性
- 型号:
HGT1S7N60A4DS
- 功能描述:
IGBT 晶体管 600V N-Ch IGBT SMPS Series HF
- RoHS:
否
- 制造商:
Fairchild Semiconductor
- 配置:
集电极—发射极最大电压
- VCEO:
650 V
- 集电极—射极饱和电压:
2.3 V
- 栅极/发射极最大电压:
20 V 在25
- C的连续集电极电流:
150 A
- 栅极—射极漏泄电流:
400 nA
- 功率耗散:
187 W
- 封装/箱体:
TO-247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
FAIRCHILD/仙童 |
21+ |
TO263 |
1709 |
询价 | |||
FAIRCHILD |
21+ |
35200 |
一级代理/放心采购 |
询价 | |||
FAIRCHILD/仙童 |
23+ |
TO263 |
90000 |
只做原厂渠道价格优势可提供技术支持 |
询价 | ||
FAIRCHILD |
22+ |
SOT-5237&NBS |
3200 |
全新原装品牌专营 |
询价 | ||
FAIRCHILD/仙童 |
24+ |
TO263 |
880000 |
明嘉莱只做原装正品现货 |
询价 | ||
FAIRCHILD/仙童 |
22+ |
TO263 |
12245 |
现货,原厂原装假一罚十! |
询价 | ||
FAIRCHILD |
2023+ |
SMD |
14548 |
安罗世纪电子只做原装正品货 |
询价 | ||
FAIRCHILD |
22+23+ |
TO263 |
10426 |
绝对原装正品全新进口深圳现货 |
询价 | ||
Fairchild(飞兆/仙童) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
询价 | ||
FAIRCHILD |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 |