800V N-Channel MOSFET

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SEMIHOW

MOSFET

SemiHow

HiPerFET Power MOSFETs

HiPerFET Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive

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IXYS

艾赛斯

TMOS POWER FET 7.0 AMPERES 800 VOLTS RDS(on) = 1.0 OHM

TMOS E−FET Power Field Effect Transistor TO-247 with Isolated Mounting Hole N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMO

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MOTOROLA

摩托罗拉

Advanced Power MOSFET

文件：261.279 Kbytes 页数：6 Pages

FAIRCHILD

仙童半导体