首页 >HFBR5803AQZ>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
FDDI100Mb/sATMandFastEthernetTransceiversinLowCost1x9PackageStyle | HPAgilent(Hewlett-Packard) 安捷伦科技安捷伦科技有限公司 | HP | ||
FDDI100Mb/sATMandFastEthernetTransceiversinLowCost1x9PackageStyle | HPAgilent(Hewlett-Packard) 安捷伦科技安捷伦科技有限公司 | HP | ||
HM5803-BatteryChargerBatteryProtectionSOC | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | HMSEMI | ||
PowerMOSFET(Vdss=-40V) Description TheseP-channelHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievetheextremelylowon-resistancepersiliconarea.Thisbenefitprovidesthedesignerwithanextremelyefficientdeviceforuseinbatteryandloadmanagementapplicati | IRF International Rectifier | IRF | ||
UltraLowOn-Resistance Description TheseP-channelHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievetheextremelylowon-resistancepersiliconarea.Thisbenefitprovidesthedesignerwithanextremelyefficientdeviceforuseinbatteryandloadmanagementapplicatio | IRF International Rectifier | IRF | ||
UltraLowOn-Resistance | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
P-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
HEXFETPowerMOSFET | IRF International Rectifier | IRF | ||
HighVoltageColorDisplayHorizontalDeflectionOutput(NoDamperDiode) HighVoltageColorDisplayHorizontalDeflectionOutput (NoDamperDiode) •HighBreakdownVoltage:BVCBO=1500V •HighSpeedSwitching:tF=0.1µs(Typ.) •WideS.O.A •ForC-Monitor(85KHz) | KECKEC CORPORATION KEC株式会社 | KEC | ||
HighVoltageColorDisplayHorizontalDeflectionOutput HighVoltageColorDisplayHorizontalDeflectionOutput (DamperDiodeBuiltIn) •HighBreakdownVoltage:BVCBO=1500V •HighSpeedSwitching:tF=0.1µs(Typ.) •WideS.O.A •ForC-Monitor(85KHz) | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild |
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