HW321A

WHITEHIGHFLUXLED

I321

LeadedOscillator,TCXO,TCVCXOMetalPackage,FullSizeDIP

ProductFeatures: AvailableinBothClippedSinewaveand HCMOSOutputLevels CompatiblewithLeadfreeProcessing Applications: BaseStation IP WiMax/Wlan GeneralPurpose

INA321

microPower,Single-Supply,CMOSInstrumentationAmplifier

INA321

microPower,Single-Supply,CMOSInstrumentationAmplifier

INA321

microPower,Single-Supply,CMOSInstrumentationAmplifier

FEATURES LOWQUIESCENTCURRENT:40μA/channel ShutDown:

INA321

Wide-Temperature,PrecisionINSTRUMENTATIONAMPLIFIER

FEATURES PRECISION LOWOFFSET:100μV(max) LOWOFFSETDRIFT:0.4μV/°C(max) EXCELLENTLONG-TERMSTABILITY VERY-LOW1/fNOISE SMALLSIZE microPACKAGE:MSOP-8,MSOP-10 LOWCOST APPLICATIONS LOW-LEVELTRANSDUCERAMPLIFIERFOR BRIDGES,LOADCELLS,THERMOCOUPLES WIDEDYNAMICRANGESENSOR

INA321E

microPower,Single-Supply,CMOSInstrumentationAmplifier

FEATURES LOWQUIESCENTCURRENT:40μA/channel ShutDown:

INA321EA

microPower,Single-Supply,CMOSInstrumentationAmplifier

FEATURES LOWQUIESCENTCURRENT:40μA/channel ShutDown:

IRF321

N-ChannelPowerMOSFETs,3.0A,350-400V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighvoltage,highspaedapplications,suchasoff-lineswitchingpowersupplies,ACandDCmotorcontrols,relayandsolenoiddriversanddriversandotherpulsecircuits. •LowRDs(on) •VGS

IRF321

2.8Aand3.3A,350Vand400V,1.8and2.5Ohm,N-ChannelPowerMOSFETs

Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplica