IRF321

N-CHANNEL POWER MOSFETS

IRF321

N-Channel Power MOSFETs, 3.0 A, 350-400 V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighvoltage,highspaedapplications,suchasoff-lineswitchingpowersupplies,ACandDCmotorcontrols,relayandsolenoiddriversanddriversandotherpulsecircuits. •LowRDs(on) •VGS

IRF321

2.8A and 3.3A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs

Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplica

IRF321

isc N-Channel Mosfet Transistor

DESCRIPTION •DrainCurrentID=3.3A@TC=25℃ •DrainSourceVoltage:VDSS=350V(Min) •StaticDrain-SourceOn-Resistance:RDS(on)=2.5Ω(Max) APPLICATIONS •Switchingpowersupplies •Switchingconverters,motordriver,relaydriver

IRF321

N-Channel Power MOSFETs

IRF321

2.8A and 3.3A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs

JMB321

PortMultiplierChip

JMicronJMB321isasinglechip.ItintegratedsixindependentSATAchannelsandamicro-processor. Withpropersetting,thechipcanbeconfiguredasan1to5-portsSerialATAIIPortMultiplierora5to1-portSerialATAIIPortSelector. JMB321contains15GPIOswhichcanbec

JX321

2.5V/3.3VCMOSXO

KEHZN-321

Plug-inSignalConditionersK-UNIT

KEHZN-321/Q

Plug-inSignalConditionersK-UNIT