N-Channel Power MOSFETs, 3.0 A, 350-400 V

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high voltage, high spaed applications, such as off-line switching power supplies, AC and DC motor controls, relay and solenoid drivers and drivers and other pulse circuits. • Low RDs(on) • VGS

文件：164.92 Kbytes 页数：5 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

N-CHANNEL POWER MOSFETS

文件：213.53 Kbytes 页数：5 Pages

Samsung

三星

2.8A and 3.3A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs

Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applica

文件：67.83 Kbytes 页数：7 Pages

Intersil

isc N-Channel Mosfet Transistor

DESCRIPTION • Drain Current ID=3.3A@ TC=25℃ • Drain Source Voltage : VDSS= 350V(Min) • Static Drain-Source On-Resistance : RDS(on) =2.5Ω(Max) APPLICATIONS • Switching power supplies • Switching converters,motor driver,relay driver

文件：48.23 Kbytes 页数：2 Pages

ISC

无锡固电

2.8A and 3.3A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs

文件：137.47 Kbytes 页数：3 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

N-Channel Power MOSFETs

文件：333.66 Kbytes 页数：6 Pages

ARTSCHIP

Trans MOSFET N-CH 350V 3.3A 3-Pin(2+Tab) TO-3

NJS