首页 >HEPC0905P>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
Screwterminalblocks,pitch3.5/5.0/10.0mm | LUMBERGLumberg 隆堡 | LUMBERG | ||
MagneticBuzzer | KINGSTATEKingstate Electronics Corp. 志丰电子志丰电子股份有限公司 | KINGSTATE | ||
LDMP-SERIESHIGHPOWERPULSEDLASERDIODES | ROITHNER Roithner LaserTechnik GmbH | ROITHNER | ||
TheLS-0905SeriesareAlGaAsLEDswithpeakwavelengthof905nm. | ADVANCEDPHOTONIX Advanced Photonix, Inc. | ADVANCEDPHOTONIX | ||
L,SBANDPOWERGaAsFET? DESCRIPTION TheMGF0905A,GaAsFETwithanN-channelschottkygate,isdesignedforuseinUHFbandamplifiers. FEATURES •Highoutputpower Po=34.0dBm(TYP.)@f=1.65GHz,Pin=26dBm •Highpowergain Gp=8.0dB(TYP.)@f=1.65GHz,Pin=26dBm •Highpoweraddedefficiency P.A.E=40(TYP.) | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | Mitsubishi | ||
L,SBANDPOWERGaAsFET? DESCRIPTION TheMGF0905A,GaAsFETwithanN-channelschottkygate,isdesignedforuseinUHFbandamplifiers. FEATURES •Highoutputpower Po=34.0dBm(TYP.)@f=1.65GHz,Pin=26dBm •Highpowergain Gp=8.0dB(TYP.)@f=1.65GHz,Pin=26dBm •Highpoweraddedefficiency P.A.E=40(TYP.) | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | Mitsubishi | ||
High-powerGaAsFET(smallsignalgainstage) | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | Mitsubishi | ||
L,SBANDPOWERGaAsFET? DESCRIPTION TheMGF0905A,GaAsFETwithanN-channelschottkygate,isdesignedforuseinUHFbandamplifiers. FEATURES Highoutputpower Po=34.0dBm(TYP.)@f=1.65GHz,Pin=26dBm Highpowergain Gp=8.0dB(TYP.)@f=1.65GHz,Pin=26dBm Highpoweraddedefficiency P.A.E=4 | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | Mitsubishi | ||
POTTYPECORES | YUXIANG YUXIANG Magnetc materials Ind. Co., Ltd. | YUXIANG | ||
HighFrequencyPlanarTransformers | pulse Pulse A Technitrol Company | pulse |
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