HEF4076BT

Quadruple D-type register with 3-state outputs

DESCRIPTION TheHEF4076Bisaquadrupleedge-triggeredD-typeflip-flopwithfourdatainputs(D0toD3),twoactiveLOWdataenableinputs(ED0andED1),acommonclockinput(CP),four3-stateoutputs(O0toO3),twoactiveLOWoutputenableinputs(EO0andEO1),andanoverridingasynchronousmast

INN4076C

Off-LineCV/CCZVSFlybackIntegratedSwitcherICwith750VPowiGaN,ActiveClampDriveandSynchronousRectification

HighlyIntegrated,CompactFootprint •Zerovoltageswitching(ZVS)flybackcontrollerwithdriverfor ClampZeroTM(activeclampIC) •UniquecontrolalgorithmenablesZVSinbothDCMandCCM •Robust750VPowiGaNTMprimaryswitch •Steady-stateswitchingfrequencyupto155kHzminimizes t

KTC4076

EPITAXIALPLANARNPNTRANSISTOR(GENERALPURPOSE,SWITCHING)

GENERALPURPOSEAPPLICATION. SWITCHINGAPPLICATION. FEATURES •ExcellenthFELinearity :hFE(2)=25(Min.)atVCE=6V,IC=400mA. •ComplementarytoKTA2015.

KTC4076

TRANSISTOR(NPN)

FEATURES ●ExcellenthFELinearity ●ComplementarytoKTA2015 APPLICATIONS ●GeneralPurposeSwitching

KTC4076

SOT-323Plastic-EncapsulateTransistors

TRANSISTOR(NPN) FEATURES ●ExcellenthFELinearity ●ComplementarytoKTA2015 APPLICATIONS ●GeneralPurposeSwitching

KTC4076

NPNSiliconEpitaxialPlanarTransistor

FEATURES ●ExcellentHFELinearity. ●ComplementarytoKTA2015 ●Powerdissipation.(PC=100mW) APPLICATIONS ●Generalpurposeandswitchingapplication.

KTC4076

TRANSISTOR(NPN)

FEATURES Powerdissipation PCM:100mW(Tamb=25℃) Collectorcurrent ICM:500mA Collector-basevoltage V(BR)CBO:35V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

KTC4076

SiliconNPNtransistorinaSOT-323PlasticPackage

Descriptions SiliconNPNtransistorinaSOT-323PlasticPackage. Features ComplementarytoKTA2015 Applications Generalpurposeapplication,switchingapplication.

KTC4076

SOT-323Plastic-EncapsulateTransistors

FEATURES ExcellenthFELinearity ComplementarytoKTA2015 APPLICATIONS GeneralPurposeSwitching

KTC4076-O

NPNTransistors