8-input NAND gate

DESCRIPTION The HEF4068B provides the 8-input NAND function. The outputs are fully buffered for highest noise immunity and pattern insensitivity of output impedance.

文件：29.96 Kbytes 页数：3 Pages

PHI

飞利浦

Ultra Fats IGBT

DESCRIPTION · Low Saturation Voltage:VCE(sat)= 2.14V@IC= 48A · Low Switching Losses · Ultra Low VF Hyperfast Diode APPLICATIONS · Synchronous Rectification in SMPS · Automotive Chargers · UPS,PFC · High Voltage Auxiliaries

文件：348.57 Kbytes 页数：2 Pages

ISC

无锡固电

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS

VCES = 600V IC = 48A, TC = 100°C tSC ≥ 5μs, TJ(max) = 175°C VCE(on) typ. = 1.65V Features • Low VCE (ON) Trench IGBT Technology • Low Switching Losses • Maximum Junction temperature 175 °C • 5 μS short circuit SOA • Square RBSOA • 100 of the parts tested for ILM

文件：326.54 Kbytes 页数：10 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS

VCES = 600V IC = 48A, TC = 100°C tSC ≥ 5μs, TJ(max) = 175°C VCE(on) typ. = 1.65V Features • Low VCE (ON) Trench IGBT Technology • Low Switching Losses • Maximum Junction temperature 175 °C • 5 μS short circuit SOA • Square RBSOA • 100 of the parts tested for ILM

文件：326.54 Kbytes 页数：10 Pages

IRF