首页 >HEF4060BP其他被动元件>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
14-stageripple-carrybinarycounter/dividerandoscillator DESCRIPTION TheHEF4060Bisa14-stageripple-carrybinarycounter/dividerandoscillatorwiththreeoscillatorterminals(RS,RTCandCTC),tenbufferedoutputs(O3toO9andO11toO13)andanoverridingasynchronousmasterresetinput(MR).Theoscillatorconfigurationallowsdesignofeithe | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
MSI14-stageripple-carrybinarycounter/dividerandoscillator DESCRIPTION TheHEF4060Bisa14-stageripple-carrybinarycounter/dividerandoscillatorwiththreeoscillatorterminals(RS,RTCandCTC),tenbufferedoutputs(O3toO9andO11toO13)andanoverridingasynchronousmasterresetinput(MR).Theoscillatorconfigurationallowsdesignofeithe | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
14-stageripple-carrybinarycounter/dividerandoscillator 1.Generaldescription TheHEF4060Bisa14-stageripple-carrycounter/dividerandoscillatorwiththreeoscillator terminals(RS,REXTandCEXT),tenbufferedparalleloutputs(Q3toQ9andQ11toQ13)andan overridingasynchronousmasterreset(MR).Theoscillatorconfigurationallowsdesign | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
MSI14-stageripple-carrybinarycounter/dividerandoscillator DESCRIPTION TheHEF4060Bisa14-stageripple-carrybinarycounter/dividerandoscillatorwiththreeoscillatorterminals(RS,RTCandCTC),tenbufferedoutputs(O3toO9andO11toO13)andanoverridingasynchronousmasterresetinput(MR).Theoscillatorconfigurationallowsdesignofeithe | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
14-stageripple-carrybinarycounter/dividerandoscillator 1.Generaldescription TheHEF4060Bisa14-stageripple-carrycounter/dividerandoscillatorwiththreeoscillator terminals(RS,REXTandCEXT),tenbufferedparalleloutputs(Q3toQ9andQ11toQ13)andan overridingasynchronousmasterreset(MR).Theoscillatorconfigurationallowsdesign | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
Switchtypelithiumbatterychargemanagementchip | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | HMSEMI | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features •LowVCE(on)TrenchIGBTTechnology •LowSwitchingLosses •MaximumJunctiontemperature175°C •5µsSCSOA •SquareRBSOA •100ofThePartsTestedfor4XRatedCurrent(ILM) •PositiveVCE(on)TemperatureCoefficient. •UltraFastSoftRecoveryCo-pakDiode •TighterDistri | IRF International Rectifier | IRF | ||
LowSwitchingLosses | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTRECOVERYDIODE Features •LowVCE(on)TrenchIGBTTechnology •LowSwitchingLosses •5μsSCSOA •SquareRBSOA •100ofThePartsTestedforILM •PositiveVCE(on)TemperatureCoefficient. •UltraFastSoftRecoveryCo-pakDiode •TighterDistributionofParameters •Lead-FreePackage Benefits •Hi | IRF International Rectifier | IRF | ||
Smarthigh-sideNMOS-powerswitch | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon |
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