NPN EPITAXIAL PLANAR TRANSISTOR

Description The HE9013 is designed for use in 1W output amplifier of portable radios in class B push-pull operation. Features • High Total Power Dissipation (PT: 625mW) • High Collector Current (IC: 500mA) • Complementary to HE9012 • Excellent lnearity

文件：40.17 Kbytes 页数：4 Pages

HSMC

华昕

NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications?????????

NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications

文件：319.39 Kbytes 页数：5 Pages

SEMTECH

先之科

1W Output Amplifier of Potable Radios in Class B Push-pull Operation.

1W Output Amplifier of Potable Radios in Class B Push-pull Operation. • High total power dissipation. (PT=625mW) • High Collector Current. (IC=500mA) • Complementary to SS9012 • Excellent hFE linearity.

文件：40.08 Kbytes 页数：4 Pages

FAIRCHILD

仙童半导体

1W Output Amplifier of Potable Radios in Class B Push-pull Operation.

1W Output Amplifier of Potable Radios in Class B Push-pull Operation. • High total power dissipation. (PT=625mW) • High Collector Current. (IC=500mA) • Complementary to SS9012 • Excellent hFE linearity.

文件：40.08 Kbytes 页数：4 Pages

FAIRCHILD

仙童半导体